attenu a tors - digit a l - chip 1 HMC939A v01.0916 1.0 db lsb gaas mmic 5-bit digital attenuator, 0.1 - 40 ghz electrical specifcations, t a = +25 c, with vdd = +5v, vss = -5v & vctl = 0/ +5v t he h mc939a is ideal for: ? fiber o ptics & broadband t elecom ? microwave r adio & v s a t ? military r adios, r adar & e cm ? s pace applications 1.0 db ls b s teps to 31 db s ingle p ositive control l ine p er bit 1.0 db t ypical bit e rror h igh i nput ip 3: +43 dbm die s ize: 2.34 x 1.0 x 0.1 mm t he h mc939a die is a broadband 5-bit g aas i c digital attenuator mm i c chip. covering 0.1 to 40 gh z, the insertion loss is less than 5 db typical. t he attenuator bit values are 1.0 ( ls b), 2, 4, 8, 16 for a total attenuation of 31 db. attenuation accuracy is excellent at less than 1.0 db typical step error with an iip 3 of +43 dbm. five control voltage inputs, toggled between +5v and 0v, are used to select each attenuation state. general description features functional diagram typical applications p arameter frequency ( gh z) min. t yp. max. u nits i nsertion l oss 0.1 - 18 gh z 18 - 40 gh z 4.3 7.0 5.0 7. 8 db db attenuation r ange 0.1 - 40 gh z 31 db r eturn l oss ( r f1, all atten. s tates) ( r f2, all atten. s tates) 0.1 - 40 gh z 0.1 - 40 gh z 10 12 db attenuation accuracy: ( r eferenced to i nsertion l oss) all s tates 0.1 - 15 db 16 - 31 db 0.1 - 20 gh z 20 - 40 gh z 20 - 40 gh z 0.5 + 3% of atten. s etting max 0.5 + 5% of atten. s etting max 0.6 + 6% of atten. s etting max db db db i nput p ower for 0.1 db compression 0.1 - 0.5 gh z 0.5 - 40.0 gh z 21 24 dbm dbm i nput t hird o rder i ntercept p oint ( t wo- t one i nput p ower= 8 dbm e ach t one) 0.1 - 0.5 gh z 0.5 - 40.0 gh z 43 40 dbm dbm s witching characteristics t rise , tfa ll (10/90% r f) t on /t o ff (50% c tl to 10/90% r f) 0.1 - 40 gh z 50 70 ns ns i dd 0.1 - 40 gh z 3 5 7 ma i ss 0.1 - 40 gh z -4 -6 -8 ma for price, delivery, and to place orders: analog devices, inc., one technology way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 ? order online at www.analog.com application support: phone: 1-800-analog-d information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. specifcations subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners.
attenu a tors - digit a l - chip 2 HMC939A v01.0916 1.0 db lsb gaas mmic 5-bit digital attenuator, 0.1 - 40 ghz input return loss ( o nly major s tates are s hown) output return loss ( o nly major s tates are s hown) insertion loss vs. temperature normalized attenuation ( o nly major s tates are s hown) bit error vs. frequency ( o nly major s tates are s hown) bit error vs. attenuation state -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 5 10 15 20 25 30 35 40 45 50 +25 c +85 c -55 c insertion loss (db) frequency (ghz) -50 -40 -30 -20 -10 0 0 5 10 15 20 25 30 35 40 45 50 il 1 db 2 db 4 db 8 db 16 db 31 db return loss (db) frequency (ghz) -50 -40 -30 -20 -10 0 0 5 10 15 20 25 30 35 40 45 50 il 1 db 2 db 4db 8 db 16 db 31 db return loss (db) frequency (ghz) -40 -35 -30 -25 -20 -15 -10 -5 0 0 5 10 15 20 25 30 35 40 45 50 i.l 1 db 2 db 4 db 8 db 16 db 31 db normalized attenuation (db) frequency (ghz) -2 -1.6 -1.2 -0.8 -0.4 0 0.4 0.8 1.2 1.6 2 0 4 8 12 16 20 24 28 32 1.0 ghz 10 ghz 20 ghz 30 ghz 40 ghz bit error (db) attenuation state (db) -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 0 5 10 15 20 25 30 35 40 45 50 i.l 1 db 2db 4db 8 db 16 db 31 db bit error (db) frequency (ghz) for price, delivery, and to place orders: analog devices, inc., one technology way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 ? order online at www.analog.com application support: phone: 1-800-analog-d
attenu a tors - digit a l - chip 3 HMC939A v01.0916 1.0 db lsb gaas mmic 5-bit digital attenuator, 0.1 - 40 ghz 20 30 40 50 60 0 0.1 1 10 100 i.l 1 db 2 db 4 db 8db 16 db 31 db ip3 (dbm) frequency (ghz) relative phase vs. frequency (only major states are shown) step attenuation vs. attenuation state input ip3 vs. temperature (minimum attenuation state) input ip3 over major attenuation states input power for 0.1 db compression -20 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30 35 40 45 50 i.l 1 db 2 db 4 db 8 db 16 db 31 db relative phase (deg) frequency (ghz) -0.4 0 0.4 0.8 1.2 1.6 2 2.4 0 4 8 12 16 20 24 28 32 1 ghz 10 ghz 20 ghz 30 ghz 40 ghz step attenuation (db) attenuation state (db) 20 30 40 50 60 0 0.1 1 10 100 -55c 25c +85c ip3 (dbm) frequency (ghz) 8 12 16 20 24 28 32 0.01 0.1 1 10 100 -55c 25c 85c p0.1db (dbm) frequency (ghz) for price, delivery, and to place orders: analog devices, inc., one technology way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 ? order online at www.analog.com application support: phone: 1-800-analog-d
attenu a tors - digit a l - chip 4 HMC939A v01.0916 1.0 db lsb gaas mmic 5-bit digital attenuator, 0.1 - 40 ghz truth table control voltage bias voltages & currents absolute maximum ratings control voltage i nput attenuation s tate r f1 - r f2 p4 16 db p3 8 db p2 4 db p1 2 db p 0 1 db h igh h igh h igh h igh h igh r eference i . l . h igh h igh h igh h igh l ow 1 db h igh h igh h igh l ow h igh 2 db h igh h igh l ow h igh h igh 4 db h igh l ow h igh h igh h igh 8 db l ow h igh h igh h igh h igh 16 db l ow l ow l ow l ow l ow 31 db any combination of the above states will provide an attenuation approximately equal to the sum of the bits selected. s tate bias condition l ow 0 to 0.8v @ 1 a h igh 2 to 5v @ 1 a vdd +5v @ 5 ma vss -5v @ 6 ma r f i nput p ower (0.5 to 40 gh z) +27 dbm control voltage ( p 0 to p 4) vdd + 0.5v vdd +7 vdc vss -7 vdc channel t emperature 150 c cont. p ower diss ( t =85 c) 0.453 w t hermal r esistance (channel to die bottom) 143.5 c/w s torage t emperature -65 to + 150 c o perating t emperature -40 to +85 c es d s ensitivity ( h bm) class 1a ele c trost a ti c sensiti v e de v ic e o b ser v e h a n d ling pre ca utions die packaging information [1] s tandard alternate w p -9 (waffle p ack) [2] [1] r efer to the p ackaging i nformation section for die packaging dimensions. [2] for alternate packaging information contact h ittite microwave corporation. outline drawing 1. a ll d i m ensions a re in in c hes (m illi m eters ). 2. t y pi ca l b on d p ad is .003 s q u a re . 3. t y pi ca l b on d p ad sp ac ing is .006 c enter to c enter e xc ept a s note d. 4. back si d e m et a li za tion : gol d 5. back si d e m et a l is groun d 6. b on d p ad m et a li za tion : gol d for price, delivery, and to place orders: analog devices, inc., one technology way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 ? order online at www.analog.com application support: phone: 1-800-analog-d
attenu a tors - digit a l - chip 5 HMC939A v01.0916 1.0 db lsb gaas mmic 5-bit digital attenuator, 0.1 - 40 ghz assembly diagram p ad n umber function description i nterface s chematic gn d die bottom must be connected to r f ground. 1, 9 r f1, r f2 t his pad is dc coupled and matched to 50 o hm. blocking capacitors are required if r f line potential is not equal to 0v. 2 vss n egative bias -5v 3 - 7 p 0 - p 4 s ee truth table and control voltage table. 8 vdd p ositive bias +5v pad descriptions for price, delivery, and to place orders: analog devices, inc., one technology way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 ? order online at www.analog.com application support: phone: 1-800-analog-d
attenu a tors - digit a l - chip 6 HMC939A v01.0916 1.0 db lsb gaas mmic 5-bit digital attenuator, 0.1 - 40 ghz mounting & bonding techniques for millimeterwave gaas mmics t he die should be attached directly to the ground plane eutectically or with conductive epoxy (see h mc general h andling, mounting, bonding n ote). 50 o hm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing r f to and from the chip (figure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. o ne way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. t ypical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or g el based es d protec - tive containers, and then sealed in an es d protective bag for shipment. o nce the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. d o not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow es d precautions to protect against es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. u se shielded signal and bias cables to minimize inductive pick- up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. t he surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting t he chip is back-metallized and can be die mounted with au s n eutectic preforms or with electrically conductive epoxy. t he mounting surface should be clean and fat. e utectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. d o not expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e poxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. t hermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom - mended. u se the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab for price, delivery, and to place orders: analog devices, inc., one technology way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 ? order online at www.analog.com application support: phone: 1-800-analog-d
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